Paper
23 March 2020 Spectral purity performance of high-power EUV systems
Author Affiliations +
Abstract
With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). The high EUV power of >200W being realized with this system satisfies the throughput requirements of HVM, but also requires reconsideration of the imaging aspects of spectral purity, both from the details of the EUV emission spectrum and from the DUV emission. This paper will present simulation and experimental results for the spectral purity of high-power EUV systems, and the imaging impact of this, both for the case of with and without a pellicle. Also, possible controls for spectral purity will be discussed, and a novel method will be described to measure imaging impact of varying CE and DUV. It will be shown that CE optimization towards higher source power leads to reduction in relative DUV content, that the small deltas in EUV source spectrum for higher power do not influence imaging. It will also be shown that resulting variations in DUV do not affect imaging performance significantly, provided that a suitable reticle black border is used. In short, spectral purity performance is not a bottleneck for increasing power of EUV systems to well above 250W.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark van de Kerkhof, Fei Liu, Marieke Meeuwissen, Xueqing Zhang, Robert de Kruif, Natalia Davydova, Guido Schiffelers, Felix Wählisch, Eelco van Setten, Wouter Varenkamp, Kees Ricken, Laurens de Winter, John McNamara, and Muharrem Bayraktar "Spectral purity performance of high-power EUV systems", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132321 (23 March 2020); https://doi.org/10.1117/12.2551021
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Cited by 3 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Deep ultraviolet

Extreme ultraviolet lithography

Reflectivity

Reticles

Imaging systems

Scanners

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