A new approach to removing H atoms in hydrogen depassivation lithography

S. O. Reza Moheimani; Hamed Alemansour

doi:10.1117/12.2552138

23 March 2020 A new approach to removing H atoms in hydrogen depassivation lithography

S. O. Reza Moheimani, Hamed Alemansour

Proceedings Volume 11324, Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020; 113240Y (2020) https://doi.org/10.1117/12.2552138
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Hydrogen deppasivation lithography (HDL) carried out by a scanning tunneling microscope (STM) is used to make patterns of Si dimers on a hydrogen passivated silicon surface. In this paper we discuss a new STM mode of operation that is highly suitable for removing single H atoms from the surface. This is made possible by changes we have made to the STM feedback control system that allows the STM to remove hydrogen atoms without switching the operational mode from imaging to lithography. Employing this method can potentially reduce the chance of tip-sample crash and increase the lithography precision.

Citation Download Citation

S. O. Reza Moheimani and Hamed Alemansour "A new approach to removing H atoms in hydrogen depassivation lithography", Proc. SPIE 11324, Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020, 113240Y (23 March 2020); https://doi.org/10.1117/12.2552138

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