A Study Of Enhanced Barrier Height Gates For n-InP MESFET's

A. A. Iliadis; W. Lee; O. A. Aina

doi:10.1117/12.962019

28 November 1989 A Study Of Enhanced Barrier Height Gates For n-InP MESFET's

A. A. Iliadis, W. Lee, O. A. Aina

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962019
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

We developed a surface passivation technique to enhance the barrier height of n-InP and studied the stability of the resultant contacts. The results showed that the passivation produced nearly-ideal Schottky contacts with substantially enhanced barrier heights (Φb = 0.83). We used the passivation technique to fabricate an n-channel InP FET with enhanced barrier height gates. The devices showed high stability, a maximum transconductance of 60 mS/mm and high break-down voltages. The high stability and performance of these devices demonstrates the potential this passivation holds in developing gate metallization technology for InP.

Citation Download Citation

A. A. Iliadis, W. Lee, and O. A. Aina "A Study Of Enhanced Barrier Height Gates For n-InP MESFET's", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962019

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