Feasibility of nondestructive measurement of photocarrier transport properties in semiconductors with polarization technique

Qian Wang; Weiguo Liu; Lei Gong; Liguo Wang; Yaqing Li; Rong Li

doi:10.1117/12.2560335

17 April 2020 Feasibility of nondestructive measurement of photocarrier transport properties in semiconductors with polarization technique

Qian Wang, Weiguo Liu, Lei Gong, Liguo Wang, Yaqing Li, Rong Li

Author Affiliations +

Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114551F (2020) https://doi.org/10.1117/12.2560335
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China

Abstract

The beam polarization characteristics is developed to assess the photocarrier properties of semiconductors. Based on three carrier effects (bandfilling, bandgap shrinkage, and free-carrier absorption) and Fresnel reflection theories, calculations and analyses are performed to investigate the effects of the excess carrier concentration, the photo energy and the incident angle of the probe beam on the polarization azimuth angle. The results indicate that the azimuth angle of the reflected light is approximately proportional to the excess carrier concentration at high injection level (>1018 cm^-3 ), and the proportionality constant depends on the incident photon energy and the incident angle. These studies provide an alternative for determining the photocarrier properties of semiconductors.

Citation Download Citation

Qian Wang, Weiguo Liu, Lei Gong, Liguo Wang, Yaqing Li, and Rong Li "Feasibility of nondestructive measurement of photocarrier transport properties in semiconductors with polarization technique", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114551F (17 April 2020); https://doi.org/10.1117/12.2560335

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KEYWORDS

Polarization

Semiconductors

Refractive index

Absorption

Nondestructive evaluation

Carrier dynamics

Reflectivity

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