Laser repair and clean of extreme ultraviolet lithography photomasks

Tod Robinson; Jeff LeClaire; Iacopo Mochi; Ricarda Maria Nebling; Yasin Ekinci; Dimitrios Kazazis

doi:10.1117/12.2573084

13 October 2020 Laser repair and clean of extreme ultraviolet lithography photomasks

Tod Robinson, Jeff LeClaire, Iacopo Mochi, Ricarda Maria Nebling, Yasin Ekinci, Dimitrios Kazazis

Author Affiliations +

Proceedings Volume 11518, Photomask Technology 2020; 1151809 (2020) https://doi.org/10.1117/12.2573084
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

This publication is a continuation of a prior work on the process space available for the repair and localized cleaning of extreme ultraviolet lithography (EUVL) photomasks with the fpIII femto-pulsed deep ultraviolet (UV) repair tool. This next phase of work was done in partnership with the Paul Scherrer Institute (PSI) to provide a more systematic examination of the process space. In these tests, specialized cells were produced to systematically test the effect of variations in the fpIII laser parameters with both carbon and HSQ (hydrogen silsesquioxane) absorber material pin dots on multilayer fields, according to design of experiments (DOE) methodology. Blank (no pin dot) test cells and pin dots were inspected both with nmVI AFM and PSI RESCAN EUV-actinic lensless metrology before and after laser processing. This data was then analyzed with full-factorial DOE, and less structured techniques, to provide insights into the capability of a modelled optimal fpIII laser process.

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Citation Download Citation

Tod Robinson, Jeff LeClaire, Iacopo Mochi, Ricarda Maria Nebling, Yasin Ekinci, and Dimitrios Kazazis "Laser repair and clean of extreme ultraviolet lithography photomasks", Proc. SPIE 11518, Photomask Technology 2020, 1151809 (13 October 2020); https://doi.org/10.1117/12.2573084

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