Anton D. Zaitsevhttps://orcid.org/0000-0002-7524-243X,1 Petr S. Demchenkohttps://orcid.org/0000-0003-4948-2023,1,2 Dmitry V. Zykov,1 Ekaterina A. Korotina,1 Elena S. Makarova,1 Ivan L. Tkhorzhevskiy,1 Anastasiia S. Tukmakova,1 Natallya S. Kablukova,1,3 Aleksei V. Asach,1 Anna V. Novotelnova,1 Mikhail K. Khodzitsky1,2
1ITMO Univ. (Russian Federation) 2Tydex, LLC (Russian Federation) 3Saint Petersburg State Univ. of Industrial Technologies and Design (Russian Federation)
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The influence of antimony content x and a film thickness on dynamical terahertz conductivity and galvanomagnetic properties of thin-film bismuth antimonides Bi1-xSbx at room temperature is studied in this work by means of terahertz time-domain spectroscopy and galvanomagnetic measurements. It is shown that thin bismuth-antimony films have tunable optical response in the THz frequency range. The hyperbolic permittivity dispersion of an effective film-on-substrate structure is also reported. The studied thin-film materials can be applied in detection of terahertz radiation and in terahertz filtering, modulation, phase and polarization shifting, in sensing, imaging and communication systems which work at normal conditions.
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Anton D. Zaitsev, Petr S. Demchenko, Dmitry V. Zykov, Ekaterina A. Korotina, Elena S. Makarova, Ivan L. Tkhorzhevskiy, Anastasiia S. Tukmakova, Natallya S. Kablukova, Aleksei V. Asach, Anna V. Novotelnova, Mikhail K. Khodzitsky, "Optical and electronic properties of thin bismuth-antimony films in the terahertz frequency range," Proc. SPIE 11582, Fourth International Conference on Terahertz and Microwave Radiation: Generation, Detection, and Applications, 115821P (17 November 2020); https://doi.org/10.1117/12.2583522