Multilayer X-Ray Optics Produced By Atomic Layer Epitaxy

J. K. Shurtleff; D. D. Allred; R. T. Perkins; J. M. Thorne

doi:10.1117/12.962620

27 November 1989 Multilayer X-Ray Optics Produced By Atomic Layer Epitaxy

J. K. Shurtleff, D. D. Allred, R. T. Perkins, J. M. Thorne

Proceedings Volume 1159, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy and Atomic Physics; (1989) https://doi.org/10.1117/12.962620
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Thin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques. ALE is a relatively new thin film deposition technique which we believe can produce MXOs with very small d-spacings. ALE accomplishes this by depositing a single layer of atoms during each cycle of the deposition process. Multilayers deposited by ALE should have sharp interfaces and smooth, uniform layers with precise d-spacings.

Citation Download Citation

J. K. Shurtleff, D. D. Allred, R. T. Perkins, and J. M. Thorne "Multilayer X-Ray Optics Produced By Atomic Layer Epitaxy", Proc. SPIE 1159, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy and Atomic Physics, (27 November 1989); https://doi.org/10.1117/12.962620

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