Multilayer X-Ray Optics Produced By Atomic Layer Epitaxy

K. Shurtleff; D. Allred; R. Perkins; J. Thorne

doi:10.1117/12.962655

28 July 1989 Multilayer X-Ray Optics Produced By Atomic Layer Epitaxy

K. Shurtleff, D. Allred, R. Perkins, J. Thorne

Proceedings Volume 1160, X-Ray/EUV Optics for Astronomy and Microscopy; (1989) https://doi.org/10.1117/12.962655
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Atomic layer epitaxy is a new deposition technique which is ideally suited to producing multilayer x-ray optics with very small d-spacings. ALE allows monolayer control of film thickness, produces sharp interfaces and results in high crystalline perfection of multilayers. We have established criteria for selecting pairs of materials which can be deposited by ALE and have experimentally measured these criteria. We have also developed computer codes which predict x-ray reflectivity from multilayers deposited by ALE.

Citation Download Citation

K. Shurtleff, D. Allred, R. Perkins, and J. Thorne "Multilayer X-Ray Optics Produced By Atomic Layer Epitaxy", Proc. SPIE 1160, X-Ray/EUV Optics for Astronomy and Microscopy, (28 July 1989); https://doi.org/10.1117/12.962655

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