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22 February 2021 Atomic precision fabrication of quantum devices down to the single atom regime
Richard M. Silver, Xiqiao Wang, Fan Fei, Jon Wyrick, Ranjit Kashid, Pradeep Namboodiri
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Proceedings Volume 11610, Novel Patterning Technologies 2021; 1161018 (2021) https://doi.org/10.1117/12.2586982
Event: SPIE Advanced Lithography, 2021, Online Only
Abstract
NIST is using atomically precise fabrication to develop electronic devices for use in quantum information processing and novel quantum materials. We are using hydrogen-based scanning probe lithography to enable deterministic placement of individual dopant atoms with atomically aligned contacts and gates to fabricate single atom transistors, devices for single electron spin manipulation, and arrayed devices for analog quantum simulation research. Atomic precision devices, where individual atoms or electrons fundamentally affect device performance, bring about a variety of new manufacturing and metrology challenges. Single atom defects and charge instability deeply change device performance, affecting reliable manipulation and sensing of individual electrons. Conventional metrology methods such as transmission electron and scanning electron microscopy often prove inadequate at this length scale and new, challenging electrical test methods are needed.
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Richard M. Silver, Xiqiao Wang, Fan Fei, Jon Wyrick, Ranjit Kashid, and Pradeep Namboodiri "Atomic precision fabrication of quantum devices down to the single atom regime", Proc. SPIE 11610, Novel Patterning Technologies 2021, 1161018 (22 February 2021); https://doi.org/10.1117/12.2586982
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KEYWORDS
Chemical species
Quantum dots
Metrology
Physics
Transistors
Scanning electron microscopy
Scanning probe lithography
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