Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhe Zhuang; Daisuke Iida; Pavel Kirilenko; Martin Velazquez-Rizo; Kazuhiro Ohkawa

doi:10.1117/12.2577238

6 March 2021 Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116862G (2021) https://doi.org/10.1117/12.2577238
Event: SPIE OPTO, 2021, Online Only

Conference Poster

Abstract

Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10-4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.

Conference Presentation

Citation Download Citation

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, and Kazuhiro Ohkawa "Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116862G (6 March 2021); https://doi.org/10.1117/12.2577238

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