Lattice phenomenon and mechanism analysis of CMOS image sensor irradiated by 532 nm laser

Rongzhen Zhu; Haibo Zhang; Zhaohu Wang; Xuanfeng Zhou; Yanbin Wang; Ziyang Li

doi:10.1117/12.2585036

12 March 2021 Lattice phenomenon and mechanism analysis of CMOS image sensor irradiated by 532 nm laser

Rongzhen Zhu, Haibo Zhang, Zhaohu Wang, Xuanfeng Zhou, Yanbin Wang, Ziyang Li

Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 1176306 (2021) https://doi.org/10.1117/12.2585036
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China

Abstract

In this experiment, the visible array CMOS image sensor irradiated by 532 nm pulse laser was carried out. The experimental results revealed that, with the increase of the incident power density, regular lightspot arrays appear around the main laser spot. When the laser energy density continued to increase, the phenomenon of asymmetric crosstalk appears in the image. It is analyzed that, the reason for the formation of spot array of CMOS image sensor is that after the laser was reflected by the CMOS photosensitive surface, it was reflected back to the CMOS photosensitive surface by the window glass and imaged on the photosensitive surface again. By analyzing the characteristic parameters of crosstalk line, it was considered that the crosstalk of CMOS image was the result of superposition of optical crosstalk and charge crosstalk.

Citation Download Citation

Rongzhen Zhu, Haibo Zhang, Zhaohu Wang, Xuanfeng Zhou, Yanbin Wang, and Ziyang Li "Lattice phenomenon and mechanism analysis of CMOS image sensor irradiated by 532 nm laser", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 1176306 (12 March 2021); https://doi.org/10.1117/12.2585036

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