Investigation of Copper / Polyimide Interfacial Reactions

Rao M. Nagaraj an; Victor A. Wells

doi:10.1117/12.963929

5 February 1990 Investigation of Copper / Polyimide Interfacial Reactions

Rao M. Nagaraj an, Victor A. Wells

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963929
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Currently, there is increased interest in the polyimide / copper interface. This arises from the use of polyimide as a dielectric media between copper interconnect layers in multichip modules. In this paper we report on studies of the processes/reactions occurring at the polyimide-copper interface using Auger depth profiling and FTIR spectroscopy. The samples were prepared by spin coating polyimide onto the deposited sputtered copper metal. Following this coating, the polyimide film was heat treated to promote imidization for curing. Examination of the interface showed considerable intermixing of copper ions in the polyimide layer, as revealed by Auger depth profiling and FTIR. This penetration prevents the polyimide films from complete curing during the heating process therefore limiting the long term reliability and causing failure of the interconnect. A possible failure mechanism involving copper carboxylate in polyimide film is proposed. Experimental results will be presented in details.

Citation Download Citation

Rao M. Nagaraj an and Victor A. Wells "Investigation of Copper / Polyimide Interfacial Reactions", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963929

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KEYWORDS

Copper

Interfaces

Aluminum

FT-IR spectroscopy

Metals

Coating

Ions

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