Investigations on variations of the number of QW layers on optical properties of GaN/AlGaN based LEDs

Lokesh Sharma; Ritu Sharma

doi:10.1117/12.2625255

4 March 2022 Investigations on variations of the number of QW layers on optical properties of GaN/AlGaN based LEDs

Lokesh Sharma, Ritu Sharma

Proceedings Volume 11995, Physics and Simulation of Optoelectronic Devices XXX; 1199506 (2022) https://doi.org/10.1117/12.2625255
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

In this paper, the impact of variation in the number of quantum wells and barrier layers on optical properties of GaN/AlGaN based light-emitting diode (LED) is investigated while keeping the width of the active region constant. The number of quantum well and barrier layers are varied from one to six. Simulations are carried out in TCAD software and it is observed that output optical power first increases to a certain number of quantum well layers in the LED and beyond it there is no significant increase in the output power. Output power is increased by 44% when the quantum well layer increases from three to four, thereafter it starts decreasing. On the other hand, the maximum intensity of light continuously decreases with an increase in the number of quantum well layers. The number of layers after which the optical power saturates or decreases is device-specific.

Conference Presentation

Citation Download Citation

Lokesh Sharma and Ritu Sharma "Investigations on variations of the number of QW layers on optical properties of GaN/AlGaN based LEDs", Proc. SPIE 11995, Physics and Simulation of Optoelectronic Devices XXX, 1199506 (4 March 2022); https://doi.org/10.1117/12.2625255

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