Paper
20 December 2021 Effect of annealing on electrical and optical properties of TiN thin films
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Proceedings Volume 12126, Fifteenth International Conference on Correlation Optics; 121260B (2021) https://doi.org/10.1117/12.2615178
Event: Fifteenth International Conference on Correlation Optics, 2021, Chernivtsi, Ukraine
Abstract
TiN thin films were deposited are deposited by DC reactive magnetron sputtering. The effect of annealing on the electrical and optical properties of the thin films was investigated. Temperature dependences of the resistance R of the TiN films were measured within the temperature range T ÷ 295-420 K. There was established that all samples under investigation had n-type of conductivity. Based on the dependences (αhν)2 = f(hν), the presence of direct allowed interband optical transitions in the TiN thin films is established and the optical band gap values before and after annealing are determined. Annealing in nitrogen atmospheres led to an increase in the optical width of the band gap, which may be due to deviations from the stoichiometric composition of thin TiN films during heat treatment.
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Taras T. Kovaliuk, Mykhailo M. Solovan, Andrii I. Mostovyi, and Ivan G. Оrletskyi "Effect of annealing on electrical and optical properties of TiN thin films", Proc. SPIE 12126, Fifteenth International Conference on Correlation Optics, 121260B (20 December 2021); https://doi.org/10.1117/12.2615178
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KEYWORDS
Thin films

Tin

Annealing

Nitrogen

Resistance

Atmospheric optics

Sputter deposition

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