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In this invited contribution, we review recent results and report on the phase transitions and de-pinning of the charge-density waves in single-crystal 1T-TaS2 thin-film and 1T-TaS2 / h-BN heterostructure devices. It is known that 1T-TaS2 reveals charge-density-wave phases below and above room temperature. The de-pinning of the charge-density waves in the quasi-2D materials is different from that in “conventional” bulk charge-density-wave materials with quasi-1D motifs in the crystal structure. The de-pinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current – in contrast to de-pinning in the conventional charge-density-wave materials with the quasi-1D crystal structure. The obtained results contribute to the development of the charge-density-wave devices for applications in electronics and optoelectronics.
Jonas O. Brown,Maedeh Taheri,Nicholas R. Sesing,Tina T. Salguero,Fariborz Kargar, andAlexander A. Balandin
"Charge-density-wave phase transitions in quasi-2D 1T-TaS2/h-BN heterostructure devices", Proc. SPIE 12200, Low-Dimensional Materials and Devices 2022, 1220004 (3 October 2022); https://doi.org/10.1117/12.2637881
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Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Fariborz Kargar, Alexander A. Balandin, "Charge-density-wave phase transitions in quasi-2D 1T-TaS2/h-BN heterostructure devices," Proc. SPIE 12200, Low-Dimensional Materials and Devices 2022, 1220004 (3 October 2022); https://doi.org/10.1117/12.2637881