Poster + Paper
27 December 2022 Thermal characterization of high-power GaSb-based laser
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Conference Poster
Abstract
High power mid-infrared GaSb-based lasers are desired for many applications, however, the self-heating in the active region is still one of the main influence factors for practical application. In this paper, we report on fabrication and characterization of high-power GaSb-based lasers. The temperature dependence of output performance of the device was investigated. Due to the high quality of epitaxy and wide waveguide design, the lasers exhibited a high-power capability from 288 K to 318 K. Devices with a cavity length of 1.5 mm and an aperture of 100 μm delivered a power of 1.46 W at a current of 7 A at 288 K and remains 1.10 W at 318 K under CW operation limited by thermal rollover. The characteristic temperature T0 is 151 K and 68 K below and above 298 K, respectively.
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Jianmei Shi, Cheng'ao Yang, Yihang Chen, Tianfang Wang, Hongguang Yu, Yu Zhang, Yingqiang Xu, and Zhichuan Niu "Thermal characterization of high-power GaSb-based laser", Proc. SPIE 12311, Semiconductor Lasers and Applications XII, 123110R (27 December 2022); https://doi.org/10.1117/12.2642099
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KEYWORDS
High power lasers

Heatsinks

Semiconductor lasers

Continuous wave operation

Mid-IR

Waveguides

Epitaxy

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