CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 12403 > Article
Poster + Paper
14 March 2023 Lateral brightness improvement of high-power semiconductor laser diode
Shaoyang Tan, Wuling Liu, Bangguo Wang, Wu Zhao, Jun Wang
Author Affiliations +
Proceedings Volume 12403, High-Power Diode Laser Technology XXI; 124030U (2023) https://doi.org/10.1117/12.2650885
Event: SPIE LASE, 2023, San Francisco, California, United States
Conference Poster
Abstract
High power diode lasers are widely used as the pump sources for fiber lasers and solid-state lasers, or the light sources for direct diode laser systems. The lateral brightness of diode lasers is the key parameter for the optical system with fiber coupling. The lateral brightness of a typical broad area diode laser is limited by the far-field booming rather than optical power at high operation current. In this paper, the far-field booming theory will be analyzed based on experimental observation of carrier density distribution and temperature profile along lateral direction. The temperature nonuniformity and the resulting thermal lens effect are supposed to be the dominate factor. We develop a novel high brightness laser diode structure with properly designed contact metal layer to modify the thermal conductivity profile. The thermal simulation indicate that the thermal lens effect is suppressed and the lateral far-field angle is reduced. Laser diodes with 230 μm emitter width and optimized structure are fabricated and the optical properties is investigated. The lateral far-field angle is reduced at current over 40A The optical power with same lateral brightness is increased up to 20%. This structure gives a promising high brightness solution for high power laser diode with power over 35 W. Chips with longer cavity length obtain higher power up to 51W.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Shaoyang Tan, Wuling Liu, Bangguo Wang, Wu Zhao, and Jun Wang "Lateral brightness improvement of high-power semiconductor laser diode", Proc. SPIE 12403, High-Power Diode Laser Technology XXI, 124030U (14 March 2023); https://doi.org/10.1117/12.2650885
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 6 PAGES + POSTER
DOWNLOAD PAPER SAVE TO MY LIBRARY
DOWNLOAD
POSTER
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers
Thermal effects
Waveguides
Spontaneous emission
High power lasers
Temperature distribution
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top