Development in AlGaN homojunction tunnel junction deep UV LEDs

Kengo Nagata; Satoshi Anada; Yoshiki Saito; Maki Kushimoto; Yoshio Honda; Tetsuya Takeuchi; Hiroshi Amano

doi:10.1117/12.2646757

14 March 2023 Development in AlGaN homojunction tunnel junction deep UV LEDs

Kengo Nagata, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano

Proceedings Volume 12441, Light-Emitting Devices, Materials, and Applications XXVII; 1244105 (2023) https://doi.org/10.1117/12.2646757
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

To reduce the operating voltage, we analyzed the p–n junction of an aluminum gallium nitride (AlGaN) homojunction Tunnel Junction (TJ) deep-ultraviolet light-emitting diode using phase-shifting electron holography. We obtained a phase image reflecting the band alignment of the p–n homojunction and derived a depletion layer width of approximately 10 nm. We found the AlGaN homojunction TJ forms a p-n junction. Furthermore, the operating voltage reached 8.8 V at 63 A cm^-2 by optimizing the structural characteristics of the AlGaN TJ, such as the thickness and impurity concentration, where the thickness of the TJ was 23 nm. We found that the TJ thickness should be at least the same as the depletion layer width at the AlGaN TJ.

Conference Presentation

Citation Download Citation

Kengo Nagata, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, and Hiroshi Amano "Development in AlGaN homojunction tunnel junction deep UV LEDs", Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 1244105 (14 March 2023); https://doi.org/10.1117/12.2646757

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