Characteristics of an In0.02Ga0.98N QW laser at a 462 nm wavelength

Andrei Drăgulinescu

doi:10.1117/12.2643147

2 March 2023 Characteristics of an In_0.02Ga_0.98N QW laser at a 462 nm wavelength

Andrei Drăgulinescu

Proceedings Volume 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI; 124931S (2023) https://doi.org/10.1117/12.2643147
Event: Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies 2022, 2022, Constanta, Romania

Abstract

For almost three decades, InGaN (indium gallium nitride) quantum well (QW) lasers have received a lot of interest from the scientific research community. Recently, this material system has become probably the most intensively studied among all the material systems used for quantum well lasers. We simulated the characteristics of an In_0.02Ga_0.98N QW laser at a wavelength of 462 nm, particularly the carrier concentration distribution, the potential distribution, the energy band diagram, the wave intensity profile, the I-V and L-I characteristics, the background absorption, the radiative, Auger, Shockley-Read-Hall (SRH) and stimulated recombination, threshold current density, slope efficiency and external differential quantum efficiency, to gain an almost exhaustive general view of the performance characteristics of this structure, constituting in a more useful reference for applications than previous incomplete data gathered for this structure.

Citation Download Citation

Andrei Drăgulinescu "Characteristics of an In_0.02Ga_0.98N QW laser at a 462 nm wavelength", Proc. SPIE 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI, 124931S (2 March 2023); https://doi.org/10.1117/12.2643147

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