Fabrication of dual damascene structure with nanoimprint lithography and dry-etching

Norikazu Takeuchi; Genna Hasegawa; Toshiaki Komukai; Takahiro Iwasaki; Masayuki Hatano; Motofumi Komori; Takuya Kono

doi:10.1117/12.2657912

30 April 2023 Fabrication of dual damascene structure with nanoimprint lithography and dry-etching

Norikazu Takeuchi, Genna Hasegawa, Toshiaki Komukai, Takahiro Iwasaki, Masayuki Hatano, Motofumi Komori, Takuya Kono

Author Affiliations +

Proceedings Volume 12497, Novel Patterning Technologies 2023; 124970E (2023) https://doi.org/10.1117/12.2657912
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

Nanoimprint lithography (NIL) has received attention as alternative lithographic technology, which can fabricate fine patterns of semiconductor devices at low cost. Application of NIL may lead to the reduction of number of process steps and cost of manufacturing of dual-damascene structure, by simultaneous fabrication of holes and trenches. Therefore, in this study, we investigated fabrication of dual-damascene structure using NIL and dry-etching. However, the difficulty in dry-etching process is high as the holes and trenches are etched together using single resist mask. Suppression of defects during the NIL process and the suppression of resist consumption and CD shift during the etching process, is critical. To address these issues, we used a high etching resistance resist, optimized the NIL process to reduce defects, and optimized the template structure and etching process to suppress resist consumption and CD shift. As a result, a dual-damascene structure with L/S = 4X/4X nm was obtained.

Conference Presentation

Citation Download Citation

Norikazu Takeuchi, Genna Hasegawa, Toshiaki Komukai, Takahiro Iwasaki, Masayuki Hatano, Motofumi Komori, and Takuya Kono "Fabrication of dual damascene structure with nanoimprint lithography and dry-etching", Proc. SPIE 12497, Novel Patterning Technologies 2023, 124970E (30 April 2023); https://doi.org/10.1117/12.2657912

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