Effect of different doping methods of EBCMOS on charge collection efficiency and analysis

Qidong Shi; Xulei Qin; Feng Shi; Ye Li; De Song

doi:10.1117/12.2665303

12 April 2023 Effect of different doping methods of EBCMOS on charge collection efficiency and analysis

Qidong Shi, Xulei Qin, Feng Shi, Ye Li, De Song

Proceedings Volume 12565, Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022); 125653Z (2023) https://doi.org/10.1117/12.2665303
Event: Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022), 2022, Shanghai, China

Abstract

We investigated the effect of different gradient doping methods on the charge collection efficiency of the electron multiplication layer of Electron Bombarded CMOS (EBCMOS) devices. EBCMOS devices achieve high gain by bombarding the back side of the thinned sensor with photoelectrons. In order to improve the gain of EBCMOS devices, this paper obtains the multiplication process and scattering trajectory of electrons in the electron multiplication layer of EBCMOS from the Monte-Carlo statistical method, combined with the interaction model of low-energy electrons and P-type silicon substrate, and finally calculates the charge collection efficiency under different doping methods. It is demonstrated experimentally that a suitable doping method can improve the charge collection efficiency of EBCMOS devices, thus improving the imaging quality. The optimized doping structure model achieves a charge collection efficiency of 94.18% at an incident electron energy of 4 KeV, an incident electron beam diameter of 20 nm, and a P-type epitaxial layer of 10 um.

Citation Download Citation

Qidong Shi, Xulei Qin, Feng Shi, Ye Li, and De Song "Effect of different doping methods of EBCMOS on charge collection efficiency and analysis", Proc. SPIE 12565, Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022), 125653Z (12 April 2023); https://doi.org/10.1117/12.2665303

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