Integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects

Jeffrey D. Morse; Raymond P. Mariella; Gregory Anderson; Robert W. Dutton

doi:10.1117/12.20683

1 August 1990 Integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects

Jeffrey D. Morse, Raymond P. Mariella, Gregory Anderson, Robert W. Dutton

Author Affiliations +

Proceedings Volume 1281, Optical Interconnections and Networks; (1990) https://doi.org/10.1117/12.20683
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

GaAs layers have been grown on silicon subsirates by Molecular Beam Epitaxy (MBE), from which photoconductive circuit elements (PCE) have been fabricated. A fabrication procedure will be described which is fully compatible with standard siicdn IC processing technology. Results will be presented demonstrating the reliance of GaAs PCE performance on epitaxial growth conditions and subsequent processing steps. PCE response speeds ranging from <10 to 60 P5 have been observed.

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Jeffrey D. Morse, Raymond P. Mariella, Gregory Anderson, and Robert W. Dutton "Integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects", Proc. SPIE 1281, Optical Interconnections and Networks, (1 August 1990); https://doi.org/10.1117/12.20683

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