A high sensitivity positive e-beam resist EBR-9 HS30

Mutsuo Kataoka

doi:10.1117/12.3011929

12 October 2023 A high sensitivity positive e-beam resist EBR-9 HS30

Mutsuo Kataoka

Proceedings Volume 12811, Bay Area Chrome Users Society Symposium 1987; 1281106 (2023) https://doi.org/10.1117/12.3011929
Event: 7th Annual BACUS Symposium, 1987, Sunnyvale, CA, United States

Abstract

The sensitivity of conventional EBR-9 was improved by changing the molecular structure of the polymer. This new resist was named EBR-9 HS30, the HS standing for high sensitivity. The sensitivity of EBR-9 HS30 is higher than EBR-9 by 3-4 times which means this resist can be used by MEBES at 1-1.6 uC/cm² dosage. The pre-baking method is a key point in the resist process to provide good critical dimension uniformity. Another characteristic of this new resist is the stability after pre-bake and exposure. Practically no sensitivity change was observed after pre-bake and exposure. This paper will present fundamental data of EBR-9 HS30 and some preliminary evaluation data of mask making by courtesy of DNP (Dai Nippon Printing Co.).

Citation Download Citation

Mutsuo Kataoka "A high sensitivity positive e-beam resist EBR-9 HS30", Proc. SPIE 12811, Bay Area Chrome Users Society Symposium 1987, 1281106 (12 October 2023); https://doi.org/10.1117/12.3011929

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