Effects of patterning and thermal annealing on the crystalline quality of GaAs grown on Si by MBE

Naresh Chand; Sung-Nee G. Chu; Jan P. van der Ziel

doi:10.1117/12.20820

1 October 1990 Effects of patterning and thermal annealing on the crystalline quality of GaAs grown on Si by MBE

Naresh Chand, Sung-Nee G. Chu, Jan P. van der Ziel

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20820
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The defect reduction schemes in GaAs-on-Si such as: (1) Optimization of initial nucleation process; (2) inserting strained-layer superlattices for dislocation filtering; (3) thermal annealing, both in-situ and ex-situ; and (4) growth patterning are briefly reviewed and new data are presented. Spatially resolved photoluminescence (SRPL) images show that the material quality is significantly better when the (100) Si substrates are misoriented towards (oil) as compared to growth on (100) substrate or when the misorientation is towards (001). The post growth patterning to <15 jtm X 15 m patterns combined with thermal annealing at 850° C for > 15 mm eliminates the dark line defects in SRPL images and markedly reduces the thermally induced biaxial tensile stress in GaAs-on-Si. The technique is ideal for growth and fabrication of AlGaAs-GaAs vertical cavity surface emitting lasers on Si. In edge emitting lasers, where post-growth patterning alone does not significantly reduces the stress due to large cavity length, the tensile stress can be fully or over compensated by introduction of a compensating stress from a thermally deposited SiO2 layer. With the reduction of stress, stability of the lasers has been found to improve.

Citation Download Citation

Naresh Chand, Sung-Nee G. Chu, and Jan P. van der Ziel "Effects of patterning and thermal annealing on the crystalline quality of GaAs grown on Si by MBE", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20820

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