Angle dependence of photoreflectance on GaAs multiple quantum wells

Gwo-Jen Jan; Kuo-Tung Hsu; Poh-Kun Tseng; Chung-Ping Liu; I-Fan Chang

doi:10.1117/12.20848

1 August 1990 Angle dependence of photoreflectance on GaAs multiple quantum wells

Gwo-Jen Jan, Kuo-Tung Hsu, Poh-Kun Tseng, Chung-Ping Liu, I-Fan Chang

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20848
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The excitonic photoreflectance (PR) spectra of GaAs/A1GaAs multiple quantum wells, grown by the molecular beam epitaxial (MBE) technique, were investigated at oblique and near-normal incident angle with different polarized probe lights. The PR spectra have been measured at room temperature using He-Ne laser as a pumping beam in order to study the variations of the spectral line shapes. The experimental results show that the usefulness of the electromodulation to characterize the microstructure of the substrate may be enhanced if we take in account the polarization state of the probe light which is incident at larger oblique angle. The PR spectra were fitted by a third order derivative functional line shape, thus making it possible to determine the energy band gap, broadening parameters, amplitudes, and the phases of the spectral features precisely.

Citation Download Citation

Gwo-Jen Jan, Kuo-Tung Hsu, Poh-Kun Tseng, Chung-Ping Liu, and I-Fan Chang "Angle dependence of photoreflectance on GaAs multiple quantum wells", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20848

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