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On-product overlay (OPO) control in the DRAM process has become a critical component from node to node to produce high device yield. To meet OPO node goals, Non-Zero Offset (NZO) and its stability across lots must be monitored and controlled. NZO is the bias between overlay (OVL) on-target measurement at After Development Inspection (ADI) vs. on-device measurement at After Etching Inspection (AEI). In this paper, we will present Imaging-Based Overlay (IBO) metrology data at ADI of two different marks, segmented AIM® with design rule patterns and robust AIM (rAIM®) with Moiré effect with a small pitch. NZO analysis will be presented for each target type including basic performance.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Cheng-Ta Cheng, Hong Ching, Foster Huang, Zephyr Liu, Dor Yehuda, Michael Har-Zvi, Chris Hsieh, Penny Lin, York Yang, "NZO reduction via small pitch imaging-based overlay targets," Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 1295530 (9 April 2024); https://doi.org/10.1117/12.3010703