Poster + Paper
9 April 2024 Diffraction-based metrology for dose monitoring and control
Author Affiliations +
Conference Poster
Abstract
Dose and focus are both primary contributors to a change in feature size (critical dimension – CD). Within the context of this abstract, dose refers to all ‘apparent dose’ effects within the scanner and track combination. These dose-like effects can be an actual dose from the scanner and/or an apparent dose coming from process effects (i.e. resist/develop nonuniformity) that impact CD’s in a manner similar to scanner dose. Semiconductor manufacturers monitor CD over time for process control and can institute dose and/or focus changes in order to maintain CD performance and to optimize CD uniformity. This CD monitoring and control can be time consuming and a shift in CD does not directly indicate which has changed, dose or focus. Until now there is not a good alternate way to detect and monitor dose-related changes on product wafers. This paper will introduce a dual tone target concept for dose metrology to distinguish CD changes from dose and focus and demonstrate how the dual tone target concept is used to infer the apparent dose on a diffraction-based optical metrology system, like YieldStar. The concept is verified via experimental results showing accurate dose measurements with low focus cross talk. Additionally, correlation with CD-SEM measurements will be demonstrated which shows that apparent dose derived from this diffraction-based methodology matches well to the CD-SEM.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Young Sung Kim, JongHyun Lee, SangHyun Lee, Kwangseok Maeng, JaeHyoung Kim, InSung Kim, SungWoon Uh, Eric Janda, Ajinkya Patil, SuYeun Baek, SeongYong Cho, and James Lee "Diffraction-based metrology for dose monitoring and control", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129553E (9 April 2024); https://doi.org/10.1117/12.3010991
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Critical dimension metrology

Metrology

Diffraction

Dose control

Scanners

Design

Back to Top