Paper
21 December 2023 InP-based uni-travelling-carrier photodiode array monolithically integrated circuit
Da-bao Yang, Dong Xing, Bo Liu, Xiang-yang Zhao, Zhihong Feng
Author Affiliations +
Proceedings Volume 12966, AOPC 2023: AI in Optics and Photonics ; 1296619 (2023) https://doi.org/10.1117/12.3006662
Event: Applied Optics and Photonics China 2023 (AOPC2023), 2023, Beijing, China
Abstract
InP-based uni photodiode(UTC-PD) array consisting of four photodiodes, power combiner and a monolithically integrated bias circuit using a 1/4-wavelength microstrip is presented. To increase the upper limit of power output, four identical UTC-PDs were monolithically integrated along with T-junctions to combine the power from the four PDs. Each single photodiode exhibits at least -6dBm at 110GHz, and the array was designed to produce at least 1mW in the terahertz frequency band with photocurrent of around 25mA per PD and bias voltage of -3V. The circuit has been fabricated on a 12µm-thick InP substrate, and is flipped on a 50μm-thick AlN-based coplanar waveguide circuit for test.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Da-bao Yang, Dong Xing, Bo Liu, Xiang-yang Zhao, and Zhihong Feng "InP-based uni-travelling-carrier photodiode array monolithically integrated circuit", Proc. SPIE 12966, AOPC 2023: AI in Optics and Photonics , 1296619 (21 December 2023); https://doi.org/10.1117/12.3006662
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KEYWORDS
Photodiodes

Terahertz radiation

Chip manufacturing

Design and modelling

Integrated circuits

Incident light

Laser frequency

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