Eric Kroemer,1 Clément Cardoux,1 Nicolas Pauc,2 Vincent Calvo,2 Valentina Boninohttps://orcid.org/0000-0002-3616-5494,3 Jaime Segura-Ruiz,3 Jean-Michel Hartmann,1 Alexei Tchelnokov,1 Vincent Reboud1
1CEA-LETI (France) 2CEA-DRF (France) 3ESRF - The European Synchrotron (France)
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Annealings have been performed on Ge0.84Sn0.16 microstructures in order to improve their optical properties by reducing the number of defects at the origin of Sn segregation. An enhancement of the photoluminescence intensity by a factor of 2.4 for annealed microstructures compared to ones without annealing was for instance achieved. Different annealing temperatures were tested to limit Sn segregation above the epitaxy temperature.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Eric Kroemer, Clément Cardoux, Nicolas Pauc, Vincent Calvo, Valentina Bonino, Jaime Segura-Ruiz, Jean-Michel Hartmann, Alexei Tchelnokov, Vincent Reboud, "Improving optical properties of GeSn microstructures by annealing," Proc. SPIE 12999, Optical Sensing and Detection VIII, 129992N (6 June 2024); https://doi.org/10.1117/12.3022380