Comparison between single-beam and multiple-beam optical limiters in semiconductors

Jimmy Dubard; Arthur L. Smirl; Thomas F. Boggess; A. G. Cui; Steven R. Skinner

doi:10.1117/12.21674

1 October 1990 Comparison between single-beam and multiple-beam optical limiters in semiconductors

Jimmy Dubard, Arthur L. Smirl, Thomas F. Boggess, A. G. Cui, Steven R. Skinner

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Proceedings Volume 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors; (1990) https://doi.org/10.1117/12.21674
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

We report our investigations of multiple-beam optical limiter configurations using GaAs and Si as the nonlinear optical material. Three distinct multiple-beam geometries are discussed. One of these, in which two beams interfere within the semiconductor, takes advantage of transient energy transfer and photorefractive beam coupling to deplete the signal beam. The other two configurations exploit the absorptive and refractive index changes induced in the semiconductor by a strong control beam that arrives at the sample before the signal. For one of these configurations, nonlinear absorption and induced defocusing are used to attenuate the signal in the other, nonlinear absorption and induced deflection are used. We discuss the relative merits of each configuration and compare them to single beam results obtained under identical experimental conditions.

Citation Download Citation

Jimmy Dubard, Arthur L. Smirl, Thomas F. Boggess, A. G. Cui, and Steven R. Skinner "Comparison between single-beam and multiple-beam optical limiters in semiconductors", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21674

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KEYWORDS

Absorption

Gallium arsenide

Silicon

Transient nonlinear optics

Sensors

Energy transfer

Beam controllers

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