Paper
18 March 2024 Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy
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Proceedings Volume 13104, Advanced Fiber Laser Conference (AFL2023); 1310412 (2024) https://doi.org/10.1117/12.3021773
Event: Advanced Fiber Laser Conference (AFL2023), 2023, Shenzhen, China
Abstract
InAs0.02Sb0.82N0.16 thick epilayers have been grown on InAs substrates by melt epitaxy (ME) technology. Fourier transform infrared (FTIR) transmission spectra showed that the cutoff wavelength of InAs0.02Sb0.82N0.16 samples grown by ME is 10.0 μm indicating the band gap narrowing. The thickness of the epilayers grown by ME observed by scanning electron microscopy (SEM) reaches 183 μm. X-ray diffraction (XRD) measurements confirmed that the epilayers are single crystals. The full-width at half-maximum (FWHM) of InAs0.02Sb0.82N0.16 (400) CuKα1 diffraction peak is 298.8 arcsec. The high quality of the crystals benefits from the thickness of the epilayers exceeding 100 μm, which significantly suppresses the effect of the lattice mismatch between InAs0.02Sb0.82N0.16 epilayers and InAs substrates. Energy dispersive spectrometer (EDS) attached SEM measurements revealed that 16% nitrogen has been incorporated in the epilayers.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yuzhu Gao, Zun Tian Chen, and Yasuhiro Hayakawa "Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy", Proc. SPIE 13104, Advanced Fiber Laser Conference (AFL2023), 1310412 (18 March 2024); https://doi.org/10.1117/12.3021773
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KEYWORDS
Scanning electron microscopy

Spectroscopy

X-ray diffraction

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