Design of 0.5-2.5GHz ultra-wideband power amplifier

Jingchang Nan; Xiantian Wang

doi:10.1117/12.3030999

19 July 2024 Design of 0.5-2.5GHz ultra-wideband power amplifier

Jingchang Nan, Xiantian Wang

Proceedings Volume 13181, Third International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2024); 131810K (2024) https://doi.org/10.1117/12.3030999
Event: Third International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2024), 2024, Beijing, China

Abstract

The demand for wide bandwidth and high efficiency RF transmitter modules is growing in various fields, and the difficulty of power amplifier research also lies in meeting the design requirements of wide bandwidth and high efficiency at the same time. In this paper, an ultra-wideband power amplifier operating at 0.5~2.5 GHz is designed based on the gallium nitride high electron mobility transistor CGH40010F. In order to achieve higher efficiency over a wide bandwidth, an improved simplified real-frequency method is used to optimize the design of the output matching circuit. Simulation results show that the saturated output power exceeds 40.4 dBm within 0.5~2.5 GHz, the drain efficiency ranges from 55.3% to 71.4%, the gain ranges from 12.4 dB to 14.4 dB, and the gain flatness is ±1 dB. it meets the requirements of the transmitter system

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jingchang Nan and Xiantian Wang "Design of 0.5-2.5GHz ultra-wideband power amplifier", Proc. SPIE 13181, Third International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2024), 131810K (19 July 2024); https://doi.org/10.1117/12.3030999

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KEYWORDS

Design

Telecommunications

Transistors

Device simulation

Advanced distributed simulations

Broadband telecommunications

Wireless communications

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