PFAS-free EUV rinse for advanced technology nodes

Roberto Fallica; Seonggil Heo; Hyo Seon Suh; Danilo De Simone

doi:10.1117/12.3034706

12 November 2024 PFAS-free EUV rinse for advanced technology nodes

Roberto Fallica, Seonggil Heo, Hyo Seon Suh, Danilo De Simone

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 132150L (2024) https://doi.org/10.1117/12.3034706
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

Phasing out PFAS from semiconductor industry is a formidable undertaking driven both by sustainability concerns and by government regulations. Lithography process nowadays use PFAS-containing chemicals for rinsing the wafer at the end of the development process of chemically amplified resist patterned with EUV lithography. To evaluate the readiness and performance of novel PFAS-free alternative rinse liquids, we tested a concrete case of pitch 24nm dense lines/spaces patterned on CAR by EUV lithography. In previous technological nodes, rinse performance was linked to the minimization of the capillary force acting in the liquid meniscus between lines; but in pitch 24nm we found that model to be inadequate to explain the experimental observations. A larger design of experiment is proposed: by screening more than 25 rinse liquids of varying chemical composition we demonstration how each component of the rinse impacts the line breaks and pattern collapse probability, opening new ways to optimize the formulation of PFAS-free rinse.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Roberto Fallica, Seonggil Heo, Hyo Seon Suh, and Danilo De Simone "PFAS-free EUV rinse for advanced technology nodes", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 132150L (12 November 2024); https://doi.org/10.1117/12.3034706

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