Transport time and single-particle relaxation time in two-dimensional semiconductors

Alfred Gold

doi:10.1117/12.24549

1 February 1991 Transport time and single-particle relaxation time in two-dimensional semiconductors

Alfred Gold

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24549
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We discuss the transport time and the single-particle relaxation time of electrons in two dimensions. New results for homogeneous background doping are presented. We explain how the measurements of these two scattering times can be used to get information about the relevant scattering mechanism in disordered semiconductors. A possible metal-insulator transition is discussed.

Citation Download Citation

Alfred Gold "Transport time and single-particle relaxation time in two-dimensional semiconductors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24549

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