In-situ interferometric measurements in a rapid thermal processor

Jean-Marie R. Dilhac; Christian Ganibal; N. Nolhier; L. Amat

doi:10.1117/12.25717

1 April 1991 In-situ interferometric measurements in a rapid thermal processor

Jean-Marie R. Dilhac, Christian Ganibal, N. Nolhier, L. Amat

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25717
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Time Resolved Reflectivity (TRR) is first applied to the measurement of the solid phase epitaxial growth rate of As (60 keY 4. 1015 cm2) implanted (100) Si wafers. The thermal cycles consist of a fast heating phase (125C/s) followed by an isothermal plateau ranging between 520 and 624C. An activation energy of 2. 8 eV is found. TRR is then applied to temperature calibration vs. Germanium thin film melting point : it is demonstrated that reproducible results are given by the method and that it can replace thermocouples for optical pyrometer calibration. 1.

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Jean-Marie R. Dilhac, Christian Ganibal, N. Nolhier, and L. Amat "In-situ interferometric measurements in a rapid thermal processor", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25717

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