High reliability sputtered Schottky diodes on GaAs

Q. P. Pham

doi:10.1117/12.2301469

1 December 1990 High reliability sputtered Schottky diodes on GaAs

Q. P. Pham

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15141N (1990) https://doi.org/10.1117/12.2301469
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

We describe developments to improve reliability and power handling for high frequency applications in whisker contacted Schottky barrier diode mixers, detectors and multipliers fabricated by using sputtered refractory metals and silicides. The lift-off process has been used to fabricate diodes on GaAs with ideality factors of 1.18 and 1.06 for W/GaAs and TiSix/GaAs contacts respectively.

Citation Download Citation

Q. P. Pham "High reliability sputtered Schottky diodes on GaAs", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15141N (1 December 1990); https://doi.org/10.1117/12.2301469

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