Ge films fabricated by plasma-assisted deposition in hydrogen plasma

Narumi Inoue

doi:10.1117/12.2301482

1 December 1990 Ge films fabricated by plasma-assisted deposition in hydrogen plasma

Narumi Inoue

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 151420 (1990) https://doi.org/10.1117/12.2301482
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

Polycrystalline Ge film has been deposited on glass substrate by vacuum evaporation and plasma assisted deposition in hydrogen plasma. Electrical property and X-ray diffraction spectra of the film deposited at various substrate temperatures were measured. It was found that the plasma-assisted deposition method in hydrogen plasma can give the possibility of lowering the growth temperature during Ge film deposition comparing to the vacuum evaporation.

Citation Download Citation

Narumi Inoue "Ge films fabricated by plasma-assisted deposition in hydrogen plasma", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151420 (1 December 1990); https://doi.org/10.1117/12.2301482

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