Far infrared photo-hall experiments on shallow donor transitions in n-GaAs

J. Burghoorn

doi:10.1117/12.2301518

1 December 1990 Far infrared photo-hall experiments on shallow donor transitions in n-GaAs

J. Burghoorn

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 151430 (1990) https://doi.org/10.1117/12.2301518
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

The number (n) and mobility (μ) of the photo-created conduction electrons for several shallow donor transitions in high mobility n-GaAs have been studied as a function of FIR power and temperature. Both n and μ depend on the FIR power. The obvious consequences for the usual analysis of time-resolved and saturation experiments of FIR induced conductivity σ, where always a constant value for μ is assumed, will be discussed.

Citation Download Citation

J. Burghoorn "Far infrared photo-hall experiments on shallow donor transitions in n-GaAs", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151430 (1 December 1990); https://doi.org/10.1117/12.2301518

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