Electron properties in GaAs for the design of mm-wave IMPATTs

Heribert Eisele

doi:10.1117/12.2301616

1 December 1990 Electron properties in GaAs for the design of mm-wave IMPATTs

Heribert Eisele

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15145Q (1990) https://doi.org/10.1117/12.2301616
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

A very staightforward method has been developed to apply space-charge resistance measurements for determining the high-field drift velocity of electrons in GaAs. The breakdown voltages of the single-drift flat-profile IMPATT diodes used in these measurements justify the validity of well known ionization rates for still higher electric fields.

Citation Download Citation

Heribert Eisele "Electron properties in GaAs for the design of mm-wave IMPATTs", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15145Q (1 December 1990); https://doi.org/10.1117/12.2301616

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