L-T selections rules for transitions between exciton (biexciton) subbands in direct-gap semiconductors

G. K. Vlasov

doi:10.1117/12.2301620

1 December 1990 L-T selections rules for transitions between exciton (biexciton) subbands in direct-gap semiconductors

G. K. Vlasov

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15145U (1990) https://doi.org/10.1117/12.2301620
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

The selections rules for transitions between exciton (biexciton) states in crystals taking into consideration their L - T splitting are considered. It is shown that twiced number of exciton states (electroand magneto-similar), contrary to known theory, exists. The spectra of stimulated FIR radiation on excitonic transitions in CdS,previously obtained experimentally, well fit to these selection rules.

Citation Download Citation

G. K. Vlasov "L-T selections rules for transitions between exciton (biexciton) subbands in direct-gap semiconductors", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15145U (1 December 1990); https://doi.org/10.1117/12.2301620

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