Study of phase transition VO2 thin film

Jiancun Gao; Zhi Hong Lin; Liying Han

doi:10.1117/12.47275

1 November 1991 Study of phase transition VO₂ thin film

Jiancun Gao, Zhi Hong Lin, Liying Han

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47275
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Vanadium dioxide thin film that has semiconductor-to-metal phase transition has been obtained by either reactive evaporation or reactive ion assisted deposition with subsequent annealing processes. Various kinds of measurement methods have been developed in investigation of phase transition properties of vanadium dioxide films. It is observed that the performance of phase transition properties strongly depends upon the stoichiometric and crystalline characteristics of the thin film.

Citation Download Citation

Jiancun Gao, Zhi Hong Lin, and Liying Han "Study of phase transition VO₂ thin film", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47275

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