Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET

Vinaya Kumar Singh; S. R. Singh; B. B. Pal

doi:10.1117/12.57026

1 February 1992 Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET

Vinaya Kumar Singh, S. R. Singh, B. B. Pal

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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57026
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

The effect of surface recombination and modulated frequency on the intrinsic parameters of an ion implanted GaAs optical field effect transistor have been analyzed. The study reveals that the gate-source capacitance increases with gate-source voltage, first slowly, and then sharply under normally OFF condition with the increase of modulated frequency. However, the surface recombination reduces these effects depending upon the trap center density. These variations are small in a normally ON device. Also, the drain-source resistance is found to increase with the increase of modulating frequency, but it reduces with the reduction of trap- center density at a fixed flux density and drain-source voltage.

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Vinaya Kumar Singh, S. R. Singh, and B. B. Pal "Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57026

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KEYWORDS

Modulation

Capacitance

Gallium arsenide

Ions

Resistance

Field effect transistors

Instrument modeling

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