Ferroelectric integrated optics and semiconductor memory devices

H. Tiwary

doi:10.1117/12.56975

1 February 1992 Ferroelectric integrated optics and semiconductor memory devices

H. Tiwary

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56975
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

The photo-ferroelectrics are a special class of ferroelectrics to be used for optical processing of information, memory and display in integrated optoelectronics. They have better device potentials for electro-optical switching, modulation and wave guiding. Interfacing a ferroelectric directly on semiconductor material modifies the basic electrical properties of the semiconductor and it has been possible to construct several new types of field effect transistors. These are nonvolatile memory devices that can be incorporated in an integrated circuit. The ferroelectric thin film polarization is utilized to control the surface conductivity of the semiconductor substrate for its memory function.

Citation Download Citation

H. Tiwary "Ferroelectric integrated optics and semiconductor memory devices", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56975

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