Properties of 35-GHz InP DDR

Shankar P. Pati; J. P. Banerjee; S. K. Ray

doi:10.1117/12.57038

1 February 1992 Properties of 35-GHz InP DDR

Shankar P. Pati, J. P. Banerjee, S. K. Ray

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57038
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Microwave device characteristics of 35 GHz InP DDR have been obtained through accurate numerical simulation, and those are compared with the properties of Si and GaAs DDRs. The results indicate InP as a promising material for fabrication of IMPATT devices.

Citation Download Citation

Shankar P. Pati, J. P. Banerjee, and S. K. Ray "Properties of 35-GHz InP DDR", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57038

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