Large area ion beam sputtered YBa2Cu3O7-d films for novel device structures

A. Gauzzi

doi:10.1117/12.2321829

1 March 1992 Large area ion beam sputtered YBa₂Cu₃O_7-δ films for novel device structures

A. Gauzzi

Proceedings Volume 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II; (1992) https://doi.org/10.1117/12.2321829
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

We report on the improvements in preparation of large area superconducting YBa2Cu3O7-d films by single target ion beam sputtering. We show that, under suitable and reproducible sputtering conditions, the '123' stoichiometry is transferred from the YBa₂Cu₃O_7-δ target to the substrates. As deposited films on <100> SrTiO₃ show excellent superconducting properties (T_c0=90±0.5 K, ΔT_c< 1 K, j_c(77 K)=1.0-1.2x10⁶ A cm^-2) over areas larger than ≈30 cm². Lower T_c0's (60-70 K) have been obtained on Si and GaAs wafers with a conducting Indium Tin Oxide (ITO) buffer layer.

Citation Download Citation

A. Gauzzi "Large area ion beam sputtered YBa₂Cu₃O_7-δ films for novel device structures", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321829

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