Effects of doping on photoconductive switches as determined by electro-optic imaging

William R. Donaldson; Liyue Mu

doi:10.1117/12.59060

12 May 1992 Effects of doping on photoconductive switches as determined by electro-optic imaging

William R. Donaldson, Liyue Mu

Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59060
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

Using an electro-optic imaging system, we have measured the spatial and temporal structure of electric fields in photoconductive switches with four different contact configurations. Contacts with heavy doping under the metallization had the best performance. Modeling has verified these results.

Citation Download Citation

William R. Donaldson and Liyue Mu "Effects of doping on photoconductive switches as determined by electro-optic imaging", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59060

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