Study on the electrochromic mechanism of rf diode sputtered nickel oxide films

Xingfang Hu; Xiaofeng Chen; Michael G. Hutchins

doi:10.1117/12.130534

25 November 1992 Study on the electrochromic mechanism of rf diode sputtered nickel oxide films

Xingfang Hu, Xiaofeng Chen, Michael G. Hutchins

Proceedings Volume 1728, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Chromogenics for Smart Windows; (1992) https://doi.org/10.1117/12.130534
Event: Optical Materials Technology for Energy Efficiency and Solar Energy, 1992, Toulouse-Labege, France

Abstract

This paper gives the experimental evidences to establish a new electrochromism for the nickel oxide films deposited by rf reactive sputtering. ESCA results indicate that all the films in as-deposited, coloured and bleached states are nonstoichiometric nickel oxide with different oxidation states and there is no evidence to support the exitance of nickel hydroxide in the three states. SIMS has been used to analyze the injected Li⁺ concentration in these films. The relative content of Li in films is 0 for as-deposited, 1.3 for coloured and 4.0 for bleached. Li⁺ implantation has been used to initially bleach the dark as-deposited films. The results indicate that the as-deposited films can be bleached by Li⁺ implantation. A new electrochromic reaction model for the reactively sputtered nickel oxide films has been proposed.

Citation Download Citation

Xingfang Hu, Xiaofeng Chen, and Michael G. Hutchins "Study on the electrochromic mechanism of rf diode sputtered nickel oxide films", Proc. SPIE 1728, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Chromogenics for Smart Windows, (25 November 1992); https://doi.org/10.1117/12.130534

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