InGaAs/GaAs strained quantum-well lasers

Niloy K. Dutta

doi:10.1117/12.141099

16 February 1993 InGaAs/GaAs strained quantum-well lasers

Niloy K. Dutta

Proceedings Volume 1788, Sources and Detectors for Fiber Communications; (1993) https://doi.org/10.1117/12.141099
Event: Fibers '92, 1992, Boston, MA, United States

Abstract

The fabrication and performance characteristics of InGaAs/GaAs strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In_0.2Ga_0.8As/GaAs lasers emitting near 1 micrometers are useful as pump sources for erbium doped optical fiber amplifiers.

Citation Download Citation

Niloy K. Dutta "InGaAs/GaAs strained quantum-well lasers", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); https://doi.org/10.1117/12.141099

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