High-pressure CVD tungsten-stud formation using RIE cluster processes

Hung Y. Ng; D. J. Dichauzi

doi:10.1117/12.142929

16 April 1993 High-pressure CVD tungsten-stud formation using RIE cluster processes

Hung Y. Ng, D. J. Dichauzi

Author Affiliations +

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142929
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The use of CVD tungsten for filling of contacts and vias has been reported in many multilevel interconnection technology applications. W-stud formation is done by blanket tungsten deposition and subsequent either etchback or chemical-mechanical polishing (CMP). This paper presents the integration of both tungsten deposition and etchback processes in a commercial cluster tool, as compared to W-stud formation by CMP. Tungsten films were deposited at a high pressure of 70 Torr to fill high aspect ratio (3.5) contact holes without voids. Tensile stress of 10E9 dynes/cm² measured for these films was higher by almost a factor of 2 than the low pressure tungsten films deposited at 0.85 Torr. A composite W film, deposited by both high and low pressure regime, has been utilized to have both advantages of via-filled characteristic and low film stress. A multistep RIE process had been used with the majority of W removed using a SF₆/Cl₂ plasma and the remaining W was then removed with Cl₂/O₂ to minimize the microloading phenomenon. The maximum W- plug recess, observed at the edge of the wafers, is only 0.1 micrometers . Electrical test results of W contact studs formed by clustered processes are compared to W-stud formation by CMP.

Citation Download Citation

Hung Y. Ng and D. J. Dichauzi "High-pressure CVD tungsten-stud formation using RIE cluster processes", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142929

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