Paper
26 March 1993 Interferometer for phase measurements in phase-shift masks
Derek B. Dove, T. C. Chieu, Amalkumar P. Ghosh
Author Affiliations +
Abstract
The etch depth of phase shift masks is typically measured by means of profilometry and the expected phase shift is calculated from a knowledge of the refractive index at the lithographic wavelength of interest. In the case of masks utilizing deposited films the index may differ from values for bulk materials and commonly varies to some degree with method of deposition. The interferometer offers a method for the measurement of phase directly and, hence, for a means to obtain refractive index values for phase shift films on quartz blank substrates. Arrangements are described for direct phase measurements using visible, 632.8 nm, and UV, 257 nm, radiation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Derek B. Dove, T. C. Chieu, and Amalkumar P. Ghosh "Interferometer for phase measurements in phase-shift masks", Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); https://doi.org/10.1117/12.142132
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Phase shifts

Phase measurement

Photomasks

Crystals

Refractive index

Interferometers

Laser crystals

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